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Technical Library 

Product Briefs

Glossary of SOI Substrates terminology
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SOI + Trench & Refill 
Icemos Belfast -- SOI + Trench & Refill  (pdf, 128,248 bytes)
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Si-Si Bond
Icemos Belfast—Si-Si Direct Bond  (pdf, 238,853 bytes)
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SOI
Icemos Belfast—SOI Solutions  (pdf, 145,933 bytes)
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Technical Articles

General
A Commodity Analog Process Based on Bonded Wafers Semiconductor Wafer Bonding: Physics and Applications III (ECS Proceedings series, PV95-7, Pennington, NJ, 1995), p466  (pdf, 95,789 bytes)

A Fully Oxide-Isolated Bipolar Transistor Integrated Circuit Process Physics and Applications III (ECS Proceedings series, PV 95-7, Pennington, NJ, 1995), p400 (pdf, 544,652 bytes)

Bonded and Trenched SOI with Buried Silicide Layers Physics and Applications III (ECS Proceedings series, PV 95-7, Pennington, NJ, 1995), p535 (pdf, 291,638 bytes)

Conformal Deposition of LPCVD TEOS Micro-machining and Micro-fabrication Process Technology, SPIE, Oct 2001  (pdf, 295,186 bytes)

Crystal Surface Defects and Oxygen Gettering in Thermally Oxidized Bonded SOI Wafers Journal of The Electrochemical Society 148 (2), 2001, ppG36-G42 (pdf, 1,044,933 bytes)

Factors Affecting Stress-Induced Defect Generation in Trenched SOI for High-Voltage Applications 6th International Symposium on Semiconductor Wafer Bonding, San Francisco, Sept 2-7 2001  (pdf, 916,141 bytes)

High Speed Bipolar on Bonded Buried Silicide SOI (S2OI) Presented at ESSDERC'98, Sept 8-10 1998, Bordeaux, France (pdf, 477,792 bytes)

HVIC Process on Bonded Wafers with Internal Gettering 5th International Wafer Bonding Symposium, ECS-Meeting, Oct 17-22 1999, Abstract 1032  (pdf, 1,170,377 bytes)

Oxidation Induced Crystalline Defects in Bonded SOI Wafers 5th International Wafer Bonding Symposium, ECS-Meeting, Oct 17-22 1999, Abstract 1002  (pdf, 27,720 bytes)

Performance Enhancement and Evaluation of Deep Dry Etching on a Production Cluster Platform, Paper No.: [4979-01] SPIE's Micromachining and Microfabrication Process Technology VIII (MF 2003), January 27-29, 2003, San Jose, California, USA.  (pdf, 2,883,607 bytes)

Photoluminescence Study of Interface Defects in Bonded Silicon Wafers 5th International Wafer Bonding Symposium, ECS-Meeting, Oct 17-22 1999, Abstract 1003  (pdf, 324,900 bytes)

State of the Art Deep Silicon Anisotropic Etching on SOI Bonded Substrates for Dielectric Isolation and MEMS Application 5th International Wafer Bonding Symposium, ECS-Meeting, Oct 17-22 1999, Abstract 1020  (pdf, 3,992,323 bytes)

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SOI + Trench & Refill
Complementary Bipolar Fabricated by the Bonding of Patterned Buried Layers 5th International Wafer Bonding Symposium, ECS-Meeting, Oct 17-22 1999, Abstract 994 (pdf, 67,711 bytes)

Control of Crystalline Defects in Trench Isolated Thick Film SOI for High Voltage Smart Power ICs  (pdf, 223,624 bytes)

Effect of Material Properties on Stress-Induced Defect Generation in Trenched SOI 6th International Symposium on High Purity Silicon, Phoenix, Oct 22-27 2000 (pdf, 155,046 bytes)

Excess Carrier Lifetime and Surface Recombination Velocity in Dielectrically Isolated Si-tubs Extended Abstracts, ECS Fall Meeting Aug 1997, p2407  (pdf, 209,802 bytes)

Form C Opto-Solid State Relay on Bonded Wafer with 1600V Isolation 5th International Wafer Bonding Symposium, ECS-Meeting, Oct 17-22 1999, Abstract 1024  (pdf, 7,602 bytes)

HARM Processing Techniques for MEMS and MOEMS Devices using Bonded SOI Substrates and DRIE SPIE's 2000 Symposium and Education Program on Micromachining and Microfabrication, Micromachining and Microfabrication Process Technology VI, Santa Clara, California, Sept 18-20 2000 (pdf, 1,725,385 bytes)

Integration of High Voltage Devices on Thick SOI Substrates for Automotive Applications Solid-State Electronics 45, 2001, pp629-632  (pdf, 424,914 bytes)

Material Effects on Stress-Induced Defect Generation in Trenched Silicon-on-Insulator Structures Journal of The Electrochemical Society, 148 (11), 2001, ppG649-G654  (pdf, 578,023 bytes)

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Si-Si Bond
An Investigation into Interfacial Oxide in Direct Silicon Bonding 6th International Symposium on Semiconductor Wafer Bonding, San Francisco, Sept 2-7 2001 (pdf, 615,842 bytes)

Influence of Cleaning on the Quality of the Bonding Interface in Direct Bonded Silicon Wafers 5th International Symposium on Ultra Clean Processing of Silicon Surfaces, Ostende, Sept 18-20 2000 (pdf, 181,604 bytes)

Ultra-Clean Si/Si Interface Formation by Surface Preparation and Direct Bonding in Ultra-High Vacuum Extended Abstracts, ECS Fall Meeting Aug 1997, p2414, published in "The Electrochemical Society", Vol 145, May 1998, pp1645-1649 (pdf, 500,822 bytes)

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Multi Layer SOI
Fusion-bonded multilayered SOI for MEMS applications Presented: SPIE Optoelectronics, Photonics and Imaging (Opto Ireland), Galway, Sept 5-6 2002
(pdf, 4,815,758 bytes)

Single Crystal Micromachining Using Multiple Fusion Bonded Layers SPIE's 2000 Symposium and Education Program on Micromachining and Microfabrication, Micromachining and Microfabrication Process Technology VI, Santa Clara, California, Sept 18-20 2000, Paper 4174-48  (pdf, 174,346 bytes)

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SOI +
A Vertical Cavity Longwave Infrared SiGe/Si Photodetector Using a Buried Silicide Mirror IEEE Tech Digest No 97CH36103, 1997, p891 (pdf, 1,024,890 bytes)

Bonded Silicon Silicide on Insulator (S2OI) A Study of Chemical, Physical and Optical Properties for Advanced Device Fabrication
Extended Abstracts, ECS Fall Meeting Aug 1997, p2482 (pdf, 416,907 bytes)

Bonded Wafers for Use in MEMS Manufacturing Uppsala, Sweden, March 1998, p6.1 (pdf, 982,872 bytes)

Buried WSi SOI Structures IEEE International SOI Conference, Oct 1995, Paper 5.3, pp135-137  (pdf, 619,632 bytes)

Mechanical Thinning for SOI Physics and Applications III (ECS Proceedings series, PV 95-7, Pennington, NJ, 1995), p56 (pdf, 425,492 bytes)

Optical Properties of Bonded Silicon Silicide on Insulator (S2OI) A New Substrate for Electronic and Optical Devices
Presented at the 2nd International Conference on Spectroscopic Ellipsometry, Charleston 1997, to be published in "Thin Solid Films" (pdf, 85,774 bytes)

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