IceMOS Technology have developed an innovative and powerful
through-wafer interconnect technology which can allow device designers in both
standard IC and MEMS device industries overcome packaging problems associated
with their designs. Using this interconnect solution allows many of our
customers to migrate their designs easily to a wafer level package with solder
bumped contacts
Through wafer via in 430um thick 150mm wafer
Excellent planarity on top surface no topology
Fully CMOS Compatible substrate
The IceMOS Technology solution is a preprocessed substrate which is
delivered to the customer with the interconnect already formed within the
substrate. This substrate is fully CMOS compatible. All interconnect is
performed using through wafer etching and refill using heavily doped
polysilicon. The wafers meet all standard specifications for surface metallic
contamination, planarity and particle count. We have verified stable substrate
performance up to diffusion temperatures of 1200C The substrates are available
in 100mm, 125mm and 150mm diameters with interconnnect resistances as low as
1Ohm currently. The size of the interconnect vias is small typically 30um or
less in a 400um thick, 150mm wafer for a 5Ohm via. The interconnect is easily
integrated with standard metallisation processes occuring at the end of your
processing, giving good ohmic characteristics and low contact resistance. For
those customers with tighter requirements on space than resistance, vias can be
formed with aspect ratios > 20:1 so that silicon real-estate is minimised.
Fully customised to your requirements
IceMOS will develop your through-wafer interconnect solution in partner with
yourself the customer, taking your preferred interconnect pattern and
implementing in on the wafer for easy connectivity to your circuit or sensor.
The through wafer vias may be beside or below existing bond pads. The design is
optimised around the customers requirements. For more information contact us
