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Si-Si Bonded Wafers

Request a quote Data Sheet (pdf, 239kB)
SOI and Si-Si Direct Wafer Bonding Manufacturing

For semiconductor device manufacturers the Si-Si bonded wafer offers a cost effective alternative to thick epitaxial layers and inverse epi that have traditionally been used for applications such as power devices and PiN diodes.

Our advanced wafer bonding technology allows for the production of silicon substrates with one or more step changes in doping level or dopant type. Adjacent layers may range from 10,000 Ohmcm to 0.001 Ohmcm and be n-type or p-type, without experiencing the autodoping problems conventional epitaxy has. The layers have very low defect densities, consistent with those found in normal bulk single crystal silicon and also low wafer warpage. 

 

The thickness control offered in our technology is consistent with ou-SI DWB wafers are ideally suited to applications such as PIN Diode manufacture or high voltage IGBT manufacture, where thick lightly doped epitaxial layers are required on heavily doped substrates and also where the epitaxial layer must be of very high quality. Fast response and switching can be otained without the need for expensive irradiation.r conventional SOI technology (+/- 0.5um or +/- 1.0um irrespective of layer thickness) thus giving improved thickness control on the upper layer(s) compared with what conventional epitaxy can offer on thick layers.

Basic PiN diode substratePT-IGBT substrates  

For micromachining developers the Si-Si bonded wafer offers another option to achieve single crystal layers with different orientations and doping levels, enabling unique structures to be created. 

Features

  • Low Bulk crystal silicon defect density versus existing epi levels
  • Low interfacial defect density
  • Variations in crystal orientation and growth possible
  • Excellent layer uniformity
  • Low leakage current and sharp junctions

Applications

  • Replacement for thick layer epitaxial deposition
  • PIN diodes
  • RF attenuators
  • PT IGBT's
  • Photodetectors
  • X-ray detectors
  • IR sensors
  • Power devices