For semiconductor device manufacturers the Si-Si bonded wafer offers a cost
effective alternative to thick epitaxial layers and inverse epi that have
traditionally been used for applications such as power devices and PiN diodes.
Our advanced wafer bonding technology allows for the production of silicon
substrates with one or more step changes in doping level or dopant type.
Adjacent layers may range from 10,000 Ohmcm to 0.001 Ohmcm and be n-type or
p-type, without experiencing the autodoping problems conventional epitaxy has.
The layers have very low defect densities, consistent with those found in
normal bulk single crystal silicon and also low wafer warpage.
The thickness control offered in our technology is consistent
with ou-SI DWB wafers are ideally suited to applications such as PIN Diode
manufacture or high voltage IGBT manufacture, where thick lightly doped
epitaxial layers are required on heavily doped substrates and also where the
epitaxial layer must be of very high quality. Fast response and switching can
be otained without the need for expensive irradiation.r conventional SOI
technology (+/- 0.5um or +/- 1.0um irrespective of layer thickness) thus giving
improved thickness control on the upper layer(s) compared with what
conventional epitaxy can offer on thick layers.
PiN diode substratePT-IGBT
For micromachining developers the Si-Si bonded wafer offers another option to
achieve single crystal layers with different orientations and doping
levels, enabling unique structures to be created.
Low Bulk crystal silicon defect density versus existing epi levels
Low interfacial defect density
Variations in crystal orientation and growth possible
Excellent layer uniformity
Low leakage current and sharp junctions
Replacement for thick layer epitaxial deposition