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IceMOS Technology now offers a fully customised engineered substrate solution to
minimise your MEMS fabrication headaches.
Available from development lots through to full production volumes, IceMOS can
relieve ME MS manufacturers problems of capacity through critical tools and
relieve the development delays and headaches of replicating existing
fabrication techniques of fusion bonding and wafer thinning within your
organisation.
Advanced Substrate provision
Using technology developed over more than 10 years, allows IceMOS to provide
customised engineered substrates which will fit perfectly into your existing or
proposed process flow. These are substrates such as:-
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Cavity SOI - Bonded SOI or Silicon silicon DWB wafers with cavities performed
within the wafer
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Multiple SOI 2 or 3 or more layers of SOI designed around your process
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Structured wafers silicon wafers or SOI with buried electrode layers, vias,
interconnect already incorporated
Within existing production flows, such an approach will :-
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Allow you to manage and increase your process yield
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Allow you to concentrate on the key value added steps specific to your
competences.
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Lower your production costs
Within new product development, such an approach will:-
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Reduce your development time
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Reduce your development cost
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Allow you to concentrate on your core competences to provide an overall better
product
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Free up capacity taken on critical bonding, DRIE and thinning tools otherwise
used for such development
Why re-invent the wheel when you dont have to. IceMOS Technologys experience
of substrate development for customers in the high voltage IC and MEMS fields
over the past 10 years can help you develop a better product faster, with less
risk
For more information, contact us
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